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BSC026N02KSGAUMA1

BSC026N02KSGAUMA1

BSC026N02KSGAUMA1

MOSFET N-CH 20V 25A/100A TDSON

non-compliant

BSC026N02KSGAUMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.69010 -
10,000 $0.66415 -
3131 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 52.7 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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