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SQJ431AEP-T1_GE3

SQJ431AEP-T1_GE3

SQJ431AEP-T1_GE3

Vishay Siliconix

MOSFET P-CH 200V 9.4A PPAK SO-8

compliant

SQJ431AEP-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.71635 -
6,000 $0.68272 -
15,000 $0.65869 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 305mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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