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IXTT110N10L2

IXTT110N10L2

IXTT110N10L2

IXYS

MOSFET N-CH 100V 110A TO268

compliant

IXTT110N10L2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $14.41000 $14.41
30 $12.11767 $363.5301
120 $11.13500 $1336.2
510 $9.49751 $4843.7301
1,020 $9.17000 -
1 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 600W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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