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SQ4435EY-T1_GE3

SQ4435EY-T1_GE3

SQ4435EY-T1_GE3

Vishay Siliconix

MOSFET P-CHANNEL 30V 15A 8SOIC

non-compliant

SQ4435EY-T1_GE3 Pricing & Ordering

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2,500 $0.61992 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2170 pF @ 15 V
FET Feature -
Power Dissipation (Max) 6.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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