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IPN80R900P7ATMA1

IPN80R900P7ATMA1

IPN80R900P7ATMA1

MOSFET N-CHANNEL 800V 6A SOT223

compliant

IPN80R900P7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.58854 -
6,000 $0.56235 -
15,000 $0.54364 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V
FET Feature -
Power Dissipation (Max) 7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-4, TO-261AA
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