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SQ3419AEEV-T1_GE3

SQ3419AEEV-T1_GE3

SQ3419AEEV-T1_GE3

Vishay Siliconix

MOSFET P-CHANNEL 40V 6.9A 6TSOP

non-compliant

SQ3419AEEV-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.27459 -
6,000 $0.25677 -
15,000 $0.24786 -
30,000 $0.24300 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 61mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 975 pF @ 20 V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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