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SI4425FDY-T1-GE3

SI4425FDY-T1-GE3

SI4425FDY-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 12.7/18.3A 8SOIC

non-compliant

SI4425FDY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.75000 $0.75
500 $0.7425 $371.25
1000 $0.735 $735
1500 $0.7275 $1091.25
2000 $0.72 $1440
2500 $0.7125 $1781.25
0 items
Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.3W (Ta), 4.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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