Welcome to ichome.com!

logo
Home

SQ2337ES-T1_GE3

SQ2337ES-T1_GE3

SQ2337ES-T1_GE3

Vishay Siliconix

MOSFET P-CH 80V 2.2A SOT23-3

compliant

SQ2337ES-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.25992 -
6,000 $0.24408 -
15,000 $0.22824 -
30,000 $0.21715 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

IRFR1N60APBF
SUM45N25-58-E3
IXFT94N30T
IXFT94N30T
$0 $/piece
IRFL110TRPBF
PH2525L,115
SFP9540
IXTP100N04T2
IXTP100N04T2
$0 $/piece
RM8N650LD
RM8N650LD
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.