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RM8N650LD

RM8N650LD

RM8N650LD

Rectron USA

MOSFET N-CHANNEL 650V 8A TO252-2

non-compliant

RM8N650LD Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.52000 $0.52
500 $0.5148 $257.4
1000 $0.5096 $509.6
1500 $0.5044 $756.6
2000 $0.4992 $998.4
2500 $0.494 $1235
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 540mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 50 V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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