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SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 1.7A TO236

SOT-23

non-compliant

SQ2309ES-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.21660 -
6,000 $0.20340 -
15,000 $0.19020 -
30,000 $0.18096 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 336mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 265 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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