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IPU60R1K0CE

IPU60R1K0CE

IPU60R1K0CE

N-CHANNEL POWER MOSFET

SOT-23

non-compliant

IPU60R1K0CE Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.21000 $0.21
500 $0.2079 $103.95
1000 $0.2058 $205.8
1500 $0.2037 $305.55
2000 $0.2016 $403.2
2500 $0.1995 $498.75
2307 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V
FET Feature -
Power Dissipation (Max) 61W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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