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IPU60R1K0CE

IPU60R1K0CE

IPU60R1K0CE

N-CHANNEL POWER MOSFET

compliant

IPU60R1K0CE Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.21000 $0.21
500 $0.2079 $103.95
1000 $0.2058 $205.8
1500 $0.2037 $305.55
2000 $0.2016 $403.2
2500 $0.1995 $498.75
2307 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V
FET Feature -
Power Dissipation (Max) 61W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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