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SIUD402ED-T1-GE3

SIUD402ED-T1-GE3

SIUD402ED-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 1A PPAK 0806

non-compliant

SIUD402ED-T1-GE3 Pricing & Ordering

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6,000 $0.08715 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 730mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 16 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 0806
Package / Case PowerPAK® 0806
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