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FDN5632N-F085

FDN5632N-F085

FDN5632N-F085

onsemi

MOSFET N-CH 60V 1.7A SUPERSOT3

compliant

FDN5632N-F085 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.16709 -
6,000 $0.15631 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 475 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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