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SISS92DN-T1-GE3

SISS92DN-T1-GE3

SISS92DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 250V 3.4A/12.3A PPAK

non-compliant

SISS92DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.56580 -
6,000 $0.53924 -
15,000 $0.52026 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 12.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 173mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 125 V
FET Feature -
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
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