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IPP60R125P6XKSA1

IPP60R125P6XKSA1

IPP60R125P6XKSA1

MOSFET N-CH 600V 30A TO220-3

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IPP60R125P6XKSA1 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 100 V
FET Feature -
Power Dissipation (Max) 219W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
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