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SISS61DN-T1-GE3

SISS61DN-T1-GE3

SISS61DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 30.9/111.9A PPAK

non-compliant

SISS61DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.04000 $1.04
500 $1.0296 $514.8
1000 $1.0192 $1019.2
1500 $1.0088 $1513.2
2000 $0.9984 $1996.8
2500 $0.988 $2470
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 30.9A (Ta), 111.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 231 nC @ 10 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 8740 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
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