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R6509END3TL1

R6509END3TL1

R6509END3TL1

Rohm Semiconductor

650V 9A TO-252, LOW-NOISE POWER

non-compliant

R6509END3TL1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.36000 $2.36
500 $2.3364 $1168.2
1000 $2.3128 $2312.8
1500 $2.2892 $3433.8
2000 $2.2656 $4531.2
2500 $2.242 $5605
2470 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 585mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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