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SISS52DN-T1-GE3

SISS52DN-T1-GE3

SISS52DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 47.1A/162A PPAK

compliant

SISS52DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.11000 $1.11
500 $1.0989 $549.45
1000 $1.0878 $1087.8
1500 $1.0767 $1615.05
2000 $1.0656 $2131.2
2500 $1.0545 $2636.25
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 47.1A (Ta), 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 15 V
FET Feature -
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
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