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RM20N650HD

RM20N650HD

RM20N650HD

Rectron USA

MOSFET N-CH 650V 20A TO263-2

compliant

RM20N650HD Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.04000 $1.04
500 $1.0296 $514.8
1000 $1.0192 $1019.2
1500 $1.0088 $1513.2
2000 $0.9984 $1996.8
2500 $0.988 $2470
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 50 V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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