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RM20N650HD

RM20N650HD

RM20N650HD

Rectron USA

MOSFET N-CH 650V 20A TO263-2

compliant

RM20N650HD Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.04000 $1.04
500 $1.0296 $514.8
1000 $1.0192 $1019.2
1500 $1.0088 $1513.2
2000 $0.9984 $1996.8
2500 $0.988 $2470
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 50 V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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