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SISS40DN-T1-GE3

SISS40DN-T1-GE3

SISS40DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 36.5A PPAK

non-compliant

SISS40DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.59040 -
6,000 $0.56268 -
15,000 $0.54288 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 36.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 845 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
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