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IPN60R2K0PFD7SATMA1

IPN60R2K0PFD7SATMA1

IPN60R2K0PFD7SATMA1

MOSFET N-CH 650V 3A SOT223

non-compliant

IPN60R2K0PFD7SATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.85000 $0.85
500 $0.8415 $420.75
1000 $0.833 $833
1500 $0.8245 $1236.75
2000 $0.816 $1632
2500 $0.8075 $2018.75
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 134 pF @ 400 V
FET Feature -
Power Dissipation (Max) 6W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-3-1
Package / Case TO-261-3
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