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IPN60R2K0PFD7SATMA1

IPN60R2K0PFD7SATMA1

IPN60R2K0PFD7SATMA1

MOSFET N-CH 650V 3A SOT223

compliant

IPN60R2K0PFD7SATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.85000 $0.85
500 $0.8415 $420.75
1000 $0.833 $833
1500 $0.8245 $1236.75
2000 $0.816 $1632
2500 $0.8075 $2018.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 134 pF @ 400 V
FET Feature -
Power Dissipation (Max) 6W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-3-1
Package / Case TO-261-3
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