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SISH114ADN-T1-GE3

SISH114ADN-T1-GE3

SISH114ADN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 18A/35A PPAK

non-compliant

SISH114ADN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.33053 -
6,000 $0.30908 -
15,000 $0.29835 -
30,000 $0.29250 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
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