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BSZ123N08NS3GATMA1

BSZ123N08NS3GATMA1

BSZ123N08NS3GATMA1

MOSFET N-CH 80V 10A/40A 8TSDSON

compliant

BSZ123N08NS3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.53151 -
10,000 $0.51153 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 12.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 40 V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerVDFN
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