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SISA26DN-T1-GE3

SISA26DN-T1-GE3

SISA26DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 60A PPAK1212-8S

non-compliant

SISA26DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.33814 -
6,000 $0.31482 -
15,000 $0.30316 -
30,000 $0.29680 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 2247 pF @ 10 V
FET Feature -
Power Dissipation (Max) 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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