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SI4116DY-T1-E3

SI4116DY-T1-E3

SI4116DY-T1-E3

Vishay Siliconix

MOSFET N-CH 25V 18A 8SO

compliant

SI4116DY-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.59040 -
5,000 $0.56268 -
12,500 $0.54288 -
8 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1925 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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