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SISA18BDN-T1-GE3

SISA18BDN-T1-GE3

SISA18BDN-T1-GE3

Vishay Siliconix

N-CHANNEL 30 V (D-S) MOSFET POWE

non-compliant

SISA18BDN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.73000 $0.73
500 $0.7227 $361.35
1000 $0.7154 $715.4
1500 $0.7081 $1062.15
2000 $0.7008 $1401.6
2500 $0.6935 $1733.75
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.83mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 36.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8PT
Package / Case 8-PowerWDFN
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