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IRFHM3911TRPBF

IRFHM3911TRPBF

IRFHM3911TRPBF

MOSFET N-CH 100V 3.2A/20A 8PQFN

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IRFHM3911TRPBF Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 115mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id 4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 29W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (3x3)
Package / Case 8-PowerTDFN
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