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SIS447DN-T1-GE3

SIS447DN-T1-GE3

SIS447DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 18A PPAK1212-8

non-compliant

SIS447DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.40002 -
6,000 $0.37406 -
15,000 $0.36108 -
30,000 $0.35400 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 7.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 181 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 5590 pF @ 10 V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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