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FQD13N06LTM

FQD13N06LTM

FQD13N06LTM

onsemi

MOSFET N-CH 60V 11A DPAK

non-compliant

FQD13N06LTM Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.25865 -
5,000 $0.24176 -
12,500 $0.23332 -
25,000 $0.22872 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 115mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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