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SQJ211ELP-T1_GE3

SQJ211ELP-T1_GE3

SQJ211ELP-T1_GE3

Vishay Siliconix

MOSFET P-CH 100V 33.6A PPAK SO-8

non-compliant

SQJ211ELP-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.67000 $1.67
500 $1.6533 $826.65
1000 $1.6366 $1636.6
1500 $1.6199 $2429.85
2000 $1.6032 $3206.4
2500 $1.5865 $3966.25
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 33.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 30mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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