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SIRA88BDP-T1-GE3

SIRA88BDP-T1-GE3

SIRA88BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 19A/40A PPAK SO8

non-compliant

SIRA88BDP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.19388 $0.19388
500 $0.1919412 $95.9706
1000 $0.1900024 $190.0024
1500 $0.1880636 $282.0954
2000 $0.1861248 $372.2496
2500 $0.184186 $460.465
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.83mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 17W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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