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SQJ418EP-T2_GE3

SQJ418EP-T2_GE3

SQJ418EP-T2_GE3

Vishay Siliconix

MOSFET N-CH 100V 48A PPAK SO-8

non-compliant

SQJ418EP-T2_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.51183 $0.51183
500 $0.5067117 $253.35585
1000 $0.5015934 $501.5934
1500 $0.4964751 $744.71265
2000 $0.4913568 $982.7136
2500 $0.4862385 $1215.59625
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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