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SIRA14BDP-T1-GE3

SIRA14BDP-T1-GE3

SIRA14BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 21A/64A PPAK SO8

non-compliant

SIRA14BDP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.19062 -
6,000 $0.17832 -
15,000 $0.16602 -
30,000 $0.15741 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.38mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 917 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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