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IPB100N04S4H2ATMA1

IPB100N04S4H2ATMA1

IPB100N04S4H2ATMA1

MOSFET N-CH 40V 100A TO263-3

non-compliant

IPB100N04S4H2ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.84376 -
2,000 $0.78557 -
5,000 $0.75647 -
10,000 $0.74060 -
1001 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7180 pF @ 25 V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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