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SIR882BDP-T1-RE3

SIR882BDP-T1-RE3

SIR882BDP-T1-RE3

Vishay Siliconix

MOSFET N-CH 100V 16.5/67.5A PPAK

non-compliant

SIR882BDP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.68000 $1.68
500 $1.6632 $831.6
1000 $1.6464 $1646.4
1500 $1.6296 $2444.4
2000 $1.6128 $3225.6
2500 $1.596 $3990
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 16.5A (Ta), 67.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3762 pF @ 50 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 83.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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