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SI3430DV-T1-E3

SI3430DV-T1-E3

SI3430DV-T1-E3

Vishay Siliconix

MOSFET N-CH 100V 1.8A 6TSOP

non-compliant

SI3430DV-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.47921 -
6,000 $0.45671 -
15,000 $0.44064 -
0 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.14W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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