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SIR668ADP-T1-RE3

SIR668ADP-T1-RE3

SIR668ADP-T1-RE3

Vishay Siliconix

MOSFET N-CH 100V 93.6A PPAK SO-8

non-compliant

SIR668ADP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.17686 -
6,000 $1.13603 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 93.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3750 pF @ 50 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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