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ZXMN10A09KTC

ZXMN10A09KTC

ZXMN10A09KTC

Diodes Incorporated

MOSFET N-CH 100V 5A TO252-3

compliant

ZXMN10A09KTC Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.92675 -
5,000 $0.89650 -
12,500 $0.88000 -
1753 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1313 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.15W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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