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SIR624DP-T1-RE3

SIR624DP-T1-RE3

SIR624DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 200V 5.7A/18.6A PPAK

non-compliant

SIR624DP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.57255 $0.57255
500 $0.5668245 $283.41225
1000 $0.561099 $561.099
1500 $0.5553735 $833.06025
2000 $0.549648 $1099.296
2500 $0.5439225 $1359.80625
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta), 18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 100 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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