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SIR624DP-T1-RE3

SIR624DP-T1-RE3

SIR624DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 200V 5.7A/18.6A PPAK

compliant

SIR624DP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.57255 $0.57255
500 $0.5668245 $283.41225
1000 $0.561099 $561.099
1500 $0.5553735 $833.06025
2000 $0.549648 $1099.296
2500 $0.5439225 $1359.80625
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta), 18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 100 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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