Welcome to ichome.com!

logo
Home

HUF76113T3ST

HUF76113T3ST

HUF76113T3ST

N-CHANNEL POWER MOSFET

non-compliant

HUF76113T3ST Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.51000 $0.51
500 $0.5049 $252.45
1000 $0.4998 $499.8
1500 $0.4947 $742.05
2000 $0.4896 $979.2
2500 $0.4845 $1211.25
34318 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 625 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-4
Package / Case TO-261-4, TO-261AA
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SQ2398ES-T1_BE3
APT17F80S
FDP7N60NZ
FDP7N60NZ
$0 $/piece
IRFR224TRLPBF
SI7818DN-T1-GE3
FQPF3N40
PSMN5R4-25YLDX

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.