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SIR510DP-T1-RE3

SIR510DP-T1-RE3

SIR510DP-T1-RE3

Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

compliant

SIR510DP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.35000 $2.35
500 $2.3265 $1163.25
1000 $2.303 $2303
1500 $2.2795 $3419.25
2000 $2.256 $4512
2500 $2.2325 $5581.25
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 126A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4980 pF @ 50 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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