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FDFMA2P029Z-F106

FDFMA2P029Z-F106

FDFMA2P029Z-F106

onsemi

MOSFET P-CH 20V 3.1A 6MICROFET

non-compliant

FDFMA2P029Z-F106 Pricing & Ordering

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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 95mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-MicroFET (2x2)
Package / Case 6-VDFN Exposed Pad
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