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SIR410DP-T1-GE3

SIR410DP-T1-GE3

SIR410DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 35A PPAK SO-8

compliant

SIR410DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.47740 -
6,000 $0.45353 -
15,000 $0.43648 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 10 V
FET Feature -
Power Dissipation (Max) 4.2W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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