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RMD1N25ES9

RMD1N25ES9

RMD1N25ES9

Rectron USA

MOSFET N-CHANNEL 25V 1.1A SOT363

compliant

RMD1N25ES9 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.06000 $0.06
500 $0.0594 $29.7
1000 $0.0588 $58.8
1500 $0.0582 $87.3
2000 $0.0576 $115.2
2500 $0.057 $142.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 600mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 10 V
FET Feature -
Power Dissipation (Max) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363
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