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SIJH600E-T1-GE3

SIJH600E-T1-GE3

SIJH600E-T1-GE3

Vishay Siliconix

N-CHANNEL 60-V (D-S) 175C MOSFET

non-compliant

SIJH600E-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.69000 $6.69
500 $6.6231 $3311.55
1000 $6.5562 $6556.2
1500 $6.4893 $9733.95
2000 $6.4224 $12844.8
2500 $6.3555 $15888.75
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 373A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 0.92Ohm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 212 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9950 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.3W (Ta), 333W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case PowerPAK® 8 x 8
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