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DMN10H700S-7

DMN10H700S-7

DMN10H700S-7

Diodes Incorporated

MOSFET N-CH 100V 700MA SOT23

non-compliant

DMN10H700S-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.08976 -
6,000 $0.08153 -
15,000 $0.07330 -
30,000 $0.06919 -
75,000 $0.06220 -
150,000 $0.06014 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 50 V
FET Feature -
Power Dissipation (Max) 400mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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