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SIJH112E-T1-GE3

SIJH112E-T1-GE3

SIJH112E-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 23A/225A PPAK

non-compliant

SIJH112E-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.82000 $4.82
500 $4.7718 $2385.9
1000 $4.7236 $4723.6
1500 $4.6754 $7013.1
2000 $4.6272 $9254.4
2500 $4.579 $11447.5
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8050 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.3W (Ta), 333W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
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