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NDD60N900U1-1G

NDD60N900U1-1G

NDD60N900U1-1G

onsemi

MOSFET N-CH 600V 5.7A IPAK

non-compliant

NDD60N900U1-1G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.59000 $0.59
500 $0.5841 $292.05
1000 $0.5782 $578.2
1500 $0.5723 $858.45
2000 $0.5664 $1132.8
2500 $0.5605 $1401.25
29100 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 50 V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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