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SIHU6N80AE-GE3

SIHU6N80AE-GE3

SIHU6N80AE-GE3

Vishay Siliconix

MOSFET N-CH 800V 5A TO251AA

compliant

SIHU6N80AE-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.51000 $1.51
500 $1.4949 $747.45
1000 $1.4798 $1479.8
1500 $1.4647 $2197.05
2000 $1.4496 $2899.2
2500 $1.4345 $3586.25
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 100 V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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