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FDS6673BZ-G

FDS6673BZ-G

FDS6673BZ-G

onsemi

-30V P-CHANNEL POWERTRENCH MOSFE

compliant

FDS6673BZ-G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.00000 $2
500 $1.98 $990
1000 $1.96 $1960
1500 $1.94 $2910
2000 $1.92 $3840
2500 $1.9 $4750
129650 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 5 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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